The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 2008

Filed:

Jun. 22, 2006
Applicants:

Shoichi Yamauchi, Nagoya, JP;

Tomoatsu Makino, Okazaki, JP;

Makoto Kuwahara, Nagoya, JP;

Yoshiyuki Hattori, Aichi-gun, JP;

Inventors:

Shoichi Yamauchi, Nagoya, JP;

Tomoatsu Makino, Okazaki, JP;

Makoto Kuwahara, Nagoya, JP;

Yoshiyuki Hattori, Aichi-gun, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/00 (2006.01); H03K 19/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes: a cell region; a terminal region; a lower semiconductor layer; a intermediate semiconductor layer on the lower semiconductor layer including a super junction structure; a terminal upper semiconductor layer on the intermediate semiconductor layer; a terminal contact semiconductor region on a surface portion of the terminal upper semiconductor layer adjacent to the cell region; an insulation layer on the terminal upper semiconductor layer having a first part adjacent to the cell region with a small thickness and a second part adjacent to the first part with a large thickness; and a conductive layer in the cell region and a part of the terminal region, the conductive layer extending from the cell region to the part of the terminal region beyond the first part of the insulation layer.


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