The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2008
Filed:
Apr. 25, 2005
Applicants:
Ting Yiu Tsui, Garland, TX (US);
Andrew John Mckerrow, Dallas, TX (US);
Jeannette M. Jacques, Tallahassee, FL (US);
Inventors:
Ting Yiu Tsui, Garland, TX (US);
Andrew John McKerrow, Dallas, TX (US);
Jeannette M. Jacques, Tallahassee, FL (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 47/63 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides an insulating layerfor an integrated circuitcomprising a porous silicon-based dielectric layerlocated over a substrate. The insulating layer comprises a densified layercomprising an uppermost portionof the porous silicon-based dielectric layer.