The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2008
Filed:
Nov. 04, 2004
Jay S. Burnham, East Fairfield, VT (US);
James R. Elliott, Richmond, VT (US);
Kenneth R. Gault, Charlotte, VT (US);
Mousa H. Ishaq, Essex Junction, VT (US);
Steven M. Shank, Jericho, VT (US);
Mary A. St. Lawrence, Colchester, VT (US);
Jay S. Burnham, East Fairfield, VT (US);
James R. Elliott, Richmond, VT (US);
Kenneth R. Gault, Charlotte, VT (US);
Mousa H. Ishaq, Essex Junction, VT (US);
Steven M. Shank, Jericho, VT (US);
Mary A. St. Lawrence, Colchester, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A bilayer dielectric structure for substantially reducing or eliminating metal contaminants formed during subsequent polysilicon deposition is provided. The bilayer dielectric structure includes an upper surface region that is rich in chlorine located atop a bottom surface region. The upper surface region that is rich in chlorine removes metal contaminates that are present atop the structure during subsequent formation of a polysilicon layer. A method of forming the bilayer structure is also provided.