The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2008
Filed:
Dec. 16, 2004
Makoto Kuwahara, Nagoya, JP;
Yoshiyuki Hattori, Aichi-gun, JP;
Shoichi Yamauchi, Nagoya, JP;
Mikimasa Suzuki, Toyohashi, JP;
Makoto Kuwahara, Nagoya, JP;
Yoshiyuki Hattori, Aichi-gun, JP;
Shoichi Yamauchi, Nagoya, JP;
Mikimasa Suzuki, Toyohashi, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device is fabricated to include a withstand-voltage assurance layer designed into a multi-dimensional super junction structure and a group of trench gate electrodes, each of which penetrating a body layer in contact with the multi-dimensional super junction structure to reach the multi-dimensional super junction structure, so that dispersions of an on-resistance of the semiconductor device can be reduced. When a position at which the group of trench gate electrodes is created is shifted in one direction, the size of an overlap area common to the group of trench gate electrodes and an n-type column changes. However, the group of trench gate electrodes is oriented in such a way that the changes in overlap-area size are minimized.