The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2008
Filed:
Jan. 18, 2006
Byung-jun Park, Gyeonggi-do, KR;
Yun-hee Lee, Gyeonggi-do, KR;
Byung-Jun Park, Gyeonggi-do, KR;
Yun-Hee Lee, Gyeonggi-do, KR;
Abstract
Dark current caused by a crystalline defect in an interfacial surface of a device isolating layer is prevented according to an image sensor and a method of manufacturing the same. A first device isolating layer adjacent to a photodiode disposed on an upper surface of a semiconductor substrate protrudes from the semiconductor substrate. A side surface of the first device isolating layer is covered by a first spacer with a refractivity greater than that of the first device isolating layer. The photodiode is insulated by the device isolating layer protruding from the semiconductor substrate to prevent the dark current. By forming the spacer on the sidewall of the device isolating layer to attain total reflection, efficiency of light incident to the photodiode is improved.