The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2008
Filed:
Nov. 10, 2005
Ming-kwei Lee, Kaohsiung, TW;
Jung-jie Huang, Kaohsiung, TW;
Chih-feng Yen, Kaohsiung, TW;
Tsung-shiun Wu, Kaohsiung, TW;
Ming-Kwei Lee, Kaohsiung, TW;
Jung-Jie Huang, Kaohsiung, TW;
Chih-Feng Yen, Kaohsiung, TW;
Tsung-Shiun Wu, Kaohsiung, TW;
National Sun Yat-Sen University, Kaohsiung, TW;
Abstract
A method for making a MOS device includes: forming a titanium dioxide film on a semiconductor substrate; and subjecting the titanium dioxide film to a fluorine-containing ambient, and conducting passivation of grain boundary defects of the titanium dioxide film through reaction of fluorine and titanium dangling bonds in the titanium dioxide film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile