The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2008
Filed:
Sep. 30, 2005
Applicants:
Shahid Aslam, Washington, DC (US);
David Franz, Pasadena, MD (US);
Inventors:
Shahid Aslam, Washington, DC (US);
David Franz, Pasadena, MD (US);
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
Abstract
Pt/nGaN Schottky barrier diodes are disclosed that are particularly suited to serve as ultra-violet sensors operating at wavelengths below 200 nm. The Pt/nGaN Schottky barrier diodes have very large active areas, up to 1 cm, which exhibit extremely low leakage current at low reverse biases. Very large area Pt/nGaN Schottky diodes of sizes 0.25 cmand 1 cmhave been fabricated from n/nGaN epitaxial layers grown by vapor phase epitaxy on single crystal c-plane sapphire, which showed leakage currents of 14 pA and 2.7 nA, respectively for the 0.25 cmand 1 cmdiodes both configured at a 0.5V reverse bias.