The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2008
Filed:
May. 11, 2005
Applicant:
Bohumil Lojek, Colorado Springs, CO (US);
Inventor:
Bohumil Lojek, Colorado Springs, CO (US);
Assignee:
Atmel Corporation, San Jose, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/80 (2006.01);
U.S. Cl.
CPC ...
Abstract
A block alterable memory cell has a select control gate extending from a floating gate region to a drain region. The block alterable memory cell comprises a substrate layer that further includes a source implant region, a floating gate transistor region, and a drain implant region. A tunnel oxide layer overlies the substrate layer and is deposited to a thickness of approximately 70 angstroms. A first oxide layer overlies the tunnel oxide layer, with an inter poly layer overlying the first oxide layer, and a second poly layer extending over the floating gate transistor region to an edge of the drain implant region.