The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2008
Filed:
Jul. 22, 2005
Kazuya Nakayama, Kangawa, JP;
Satoshi Aida, Kanagawa, JP;
Shigeo Kouzuki, Kanagawa, JP;
Masaru Izumisawa, Kanagawa, JP;
Kazuya Nakayama, Kangawa, JP;
Satoshi Aida, Kanagawa, JP;
Shigeo Kouzuki, Kanagawa, JP;
Masaru Izumisawa, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device according to an embodiment of the present invention has a gate electrode which is formed on a semiconductor substrate via a gate insulating film, and which has a slit portion; side wall films formed at both side faces of the gate electrode and at side walls of the slit portion, and which fill an interior of the slit portion and cover the gate insulating film directly beneath the slit portion; and an interlayer insulating film formed to cover the gate electrode and the side wall films.