The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2008
Filed:
Jan. 19, 2006
Tien-chun Huang, Gueishan Township, Taoyuan County, TW;
Tien-Chun Huang, Gueishan Township, Taoyuan County, TW;
AU Optronics Corp., Hsinchu, TW;
Abstract
A method of fabricating a thin film transistor is disclosed. The method comprises forming an amorphous silicon layer overlying a substrate. A first heat treatment is then performed to reduce the hydrogen atom concentration of the amorphous silicon layer. Next, the amorphous silicon layer is patterned to form an island-shaped amorphous silicon pattern. An insulating layer is then formed over the island-shaped amorphous silicon pattern followed by forming a gate electrode on the insulating layer. Ions are then implanted into the island-shaped amorphous silicon pattern to form an ion doped region. A heat treatment is then performed to transfer the island-shaped amorphous silicon pattern into an island-shaped polysilicon pattern and simultaneously activate the ion doped region using laser annealing. A passivation layer is formed on the island-shaped polysilicon pattern followed by etching the passivation layer to form openings exposing the ion doped area.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile