The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2008
Filed:
Oct. 31, 2002
Applicants:
Mitsuru Sugawara, Tokyo, JP;
Toshiro Yamada, Tokyo, JP;
Tatsuya Sugimoto, Tokyo, JP;
Kimiaki Tanaka, Tokyo, JP;
Inventors:
Mitsuru Sugawara, Tokyo, JP;
Toshiro Yamada, Tokyo, JP;
Tatsuya Sugimoto, Tokyo, JP;
Kimiaki Tanaka, Tokyo, JP;
Assignee:
Zeon Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C08J 5/18 (2006.01); C08J 7/18 (2006.01);
U.S. Cl.
CPC ...
Abstract
A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.