The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2008
Filed:
Mar. 25, 2004
Hiroshi Kawarada, Yokohama, JP;
Hiroshi Kawarada, Yokohama, JP;
Japan Science and Technology Agency, Kawaguchi-shi, JP;
Abstract
A p channel field effect transistor in which the sensitivity of an enzyme can be enhanced by immobilizing the enzyme directly on an FET channel surface (diamond surface), as well as a sensor including the same, is provided. A diamond surface () having mixed hydrogen terminals, oxygen terminals, and amino terminals is treated under the action of glutaraldehyde OHC(CH)CHO (), so that the glutaraldehyde () is immobilized on the diamond surface () having mixed hydrogen terminals, oxygen terminals, and amino terminals. Subsequently, urease () is further applied thereto, so that the amino group () of the urease () is bonded to the glutaraldehyde (). That is, the urease () can be immobilized on the diamond surface () having mixed hydrogen terminals, oxygen terminals, and amino terminals. When the urea concentration is increased from 10M to 10M, the threshold voltage shifts by about 0.1 V in the positive direction, and the sensitivity to urea concentration of 30 mV/decade is exhibited.