The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2008

Filed:

Jul. 23, 2003
Applicants:

Dong-sauk Kim, Ichon-shi, KR;

Ho-seok Lee, Ichon-shi, KR;

Byung-jun Park, Ichon-shi, KR;

Il-young Kwon, Ichon-shi, KR;

Jong-min Lee, Ichon-shi, KR;

Hyeong-soo Kim, Ichon-shi, KR;

Jin-woong Kim, Ichon-shi, KR;

Hyung-bok Choi, Ichon-shi, KR;

Dong-woo Shin, Ichon-shi, KR;

Inventors:

Dong-Sauk Kim, Ichon-shi, KR;

Ho-Seok Lee, Ichon-shi, KR;

Byung-Jun Park, Ichon-shi, KR;

Il-Young Kwon, Ichon-shi, KR;

Jong-Min Lee, Ichon-shi, KR;

Hyeong-Soo Kim, Ichon-shi, KR;

Jin-Woong Kim, Ichon-shi, KR;

Hyung-Bok Choi, Ichon-shi, KR;

Dong-Woo Shin, Ichon-shi, KR;

Assignee:

Hynix Semiconductor Inc., Gyunggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/148 (2006.01); H01L 29/768 (2006.01);
U.S. Cl.
CPC ...
Abstract

Semiconductor devices and methods of manufacture thereof are disclosed that are capable of preventing a short of lower electrodes caused by a leaning or lifting phenomenon while forming the lower electrodes and securing enough capacitance of a capacitor by widening an effective capacitor area. The inventive semiconductor device includes: a plurality of capacitor plugs disposed in an orderly separation distance; and a plurality of lower electrodes used for a capacitor and disposed in an orderly separation distance to be respectively connected with the capacitor plugs.


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