The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2008
Filed:
Dec. 22, 2005
Emmanuel Saucedo-flores, Jalisco CP, MX;
David M. Culbertson, Tempe, AZ (US);
Emmanuel Saucedo-Flores, Jalisco CP, MX;
David M. Culbertson, Tempe, AZ (US);
Semiconductor Components Industries, L.L.C., Phoenix, AZ (US);
Abstract
A thyristor and a method for manufacturing the thyristor that includes a gate region extending from the first major surface into a semiconductor substrate and an anode region extending from the second major surface into the semiconductor substrate. A cathode region extends into a portion of the gate region. Optionally, enhanced doped regions extend into the gate and anode regions. A mesa structure having a height His formed from the first major surface and a mesa structure having a height His formed from the second major surface. The gate region extends under the first major surface of the semiconductor substrate and it extends vertically into the semiconductor substrate a distance that is greater than height H. The anode region extends under the second major surface of the semiconductor substrate and it extends vertically into the semiconductor substrate a distance that is greater than height H.