The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2008
Filed:
Jan. 24, 2003
John F. Wager, Iii, Corvallis, OR (US);
Randy L. Hoffman, Corvallis, OR (US);
John F. Wager, III, Corvallis, OR (US);
Randy L. Hoffman, Corvallis, OR (US);
Abstract
Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO, SnO, or InO. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO, SnOor InO, the substantially insulating ZnO, SnO, or InObeing produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.