The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2008
Filed:
Nov. 07, 2005
Wook-hyun Kwon, Gyeonggi-do, KR;
Wook-Hyun Kwon, Gyeonggi-do, KR;
Abstract
Embodiments of the present invention are directed to methods for forming non-volatile memory devices. A substrate is provided that has a cell region, a first peripheral region, and second peripheral region. A tunnel insulating layer and a preliminary blocking insulating layer are formed on the substrate in the cell region. A blocking insulating layer and a conductive layer are formed on the substrate in the cell region, the first peripheral region, and the second peripheral region. The conductive layer and the blocking insulating layer in the first and second peripheral regions are removed to expose at least a portion of the substrate in the first and second peripheral regions, while leaving the conductive layer and the blocking insulating layer in the cell region.