The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2008
Filed:
Jan. 20, 2006
Jung-cheng Kao, Shanghai, CN;
David Day-yee Lin, Shanghai, CN;
Jung-Cheng Kao, Shanghai, CN;
David Day-Yee Lin, Shanghai, CN;
Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Abstract
A high power RF IC capable of impeding parasitic current loss and method of manufacturing the same. First a step of semiconductor front-side processing for the high power RF components that includes inductive components is performed. Afterwards, the backside of semiconductor base is polished to a certain thickness, and then lithography and etching processes is employed for forming a backside trench contact window. A backside deposition for oxide insulation layer can be performed so that the oxide insulation layer can be located in the semiconductor base right under the inductive components for impeding the parasitic current loss generated by the inductive components in the semiconductor base due to electromagnetic induction. Therefore, performance of the inductive components operating in high frequency can be improved.