The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2008
Filed:
Sep. 27, 2005
Yukinobu Hikosaka, Kawasaki, JP;
Hirotoshi Tachibana, Kawasaki, JP;
Yukinobu Hikosaka, Kawasaki, JP;
Hirotoshi Tachibana, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor device manufacturing method, includes a step of forming refractory metal silicide layerstoin a partial area of a semiconductor substrate, a step of forming an interlayer insulating filmon the refractory metal silicide layersto, a step of forming a first conductive film, a ferroelectric film, and a second conductive filmin sequence on the interlayer insulating film, a step of forming a capacitor Q consisting of a lower electrode, a capacitor dielectric film, and an upper electrodeby patterning the first conductive film, the ferroelectric film, and the second conductive film, and a step of performing an annealing for an annealing time to suppress a agglomeration area of the refractory metal silicide layerstowithin an upper limit area.