The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2008

Filed:

Oct. 29, 2002
Applicants:

Miwa Kozawa, Kawasaki, JP;

Koji Nozaki, Kawasaki, JP;

Takahisa Namiki, Kawasaki, JP;

Junichi Kon, Kawasaki, JP;

Inventors:

Miwa Kozawa, Kawasaki, JP;

Koji Nozaki, Kawasaki, JP;

Takahisa Namiki, Kawasaki, JP;

Junichi Kon, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/38 (2006.01); G03F 7/40 (2006.01); G03F 7/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

A resist pattern thickness reducing material has at least one type selected from a water soluble resin and an alkali-soluble resin. A process for forming a resist pattern includes a step for coating the resist pattern thickness reducing material such that the surface of a first resist pattern formed is covered and forming a mixing layer of the resist pattern thickness reducing material and the material of the resist pattern, on the surface of the resist pattern. A process for manufacturing a semiconductor device includes a step for forming a resist pattern on an underlayer; a step for coating the resist pattern with a resist pattern thickness reducing material such that the surface of the resist pattern is covered and forming a mixing layer of a material of the resist pattern and the resist pattern thickness reducing material; a step for developing the resist pattern thickness reducing material to reduce thickness of the resist pattern so as to form a resist pattern reduced in thickness; a step for patterning the underlayer by etching by using the resist pattern as a mask.


Find Patent Forward Citations

Loading…