The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2008
Filed:
Jan. 14, 2005
Moris Dovek, San Jose, CA (US);
Po-kang Wang, San Jose, CA (US);
Chen-jung Chien, Sunnyvale, CA (US);
Chyu-jiuh Torng, Pleasanton, CA (US);
Yun-fei LI, Fremont, CA (US);
Moris Dovek, San Jose, CA (US);
Po-Kang Wang, San Jose, CA (US);
Chen-Jung Chien, Sunnyvale, CA (US);
Chyu-Jiuh Torng, Pleasanton, CA (US);
Yun-Fei Li, Fremont, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Abstract
In magnetic read heads based on bottom spin valves the preferred structure is for the longitudinal bias layer to be in direct contact with the free layer. Such a structure is very difficult to manufacture. The present invention overcomes this problem by introducing an extra layer between the bias electrodes and the free layer. This layer protects the free layer during processing but is thin enough to not interrupt exchange between the bias electrodes and the free layer. In one embodiment this is a layer of copper about 5 Å thick and parallel exchange is operative. In other embodiments ruthenium is used to provide antiparallel exchange between the bias electrode and the free layer. A process for manufacturing the structure is also described.