The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2008
Filed:
Oct. 15, 2004
Jin-young Kim, Icheon, KR;
Gyoo-chul JO, Gyeonggi-do, KR;
Kyu-tae Lee, Gyeongsangbuk-do, KR;
Beung-hwa Jeong, Gyeongsangbuk-do, KR;
Jin-gyu Kang, Incheon, KR;
Jin-Young Kim, Icheon, KR;
Gyoo-Chul Jo, Gyeonggi-do, KR;
Kyu-Tae Lee, Gyeongsangbuk-do, KR;
Beung-Hwa Jeong, Gyeongsangbuk-do, KR;
Jin-Gyu Kang, Incheon, KR;
LG.Philips LCD Co., Ltd., Seoul, KR;
Abstract
A semiconductor device includes a substrate having source and drain regions, a gate insulating layer on the substrate, a gate electrode on the gate insulating layer, an interlayer on the gate electrode, a source electrode connected to the source region, and a drain electrode connected to the drain region, wherein at least one of the gate electrode, the source electrode and the drain electrode includes a first metal layer of molybdenum (Mo)-titanium (Ti) alloy, a second metal layer of one of metallic metals including copper (Cu), aluminum (Al), silver (Ag) and gold (Au) on the first metal layer.