The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7336028 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 26, 2008

Filed:

Aug. 23, 2004
Applicant:

Sang-jin Lee, Suwon-si, KR;

Inventor:

Sang-Jin Lee, Suwon-si, KR;

Assignee:

Samsung SDI Co., Ltd., Suwon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 1/62 (2006.01);
U.S. Cl.
CPC ...
Abstract

An electron emission device and a manufacturing method thereof. The electron emission device includes a first substrate and a second substrate opposing one another with a predetermined gap therebetween. The first and second substrates are interconnected using a sealant to thereby form a vacuum assembly. Cathode electrodes are formed on the first substrate, and electron emission sources are formed on the cathode electrodes. Further, gate electrodes are mounted on the cathode electrodes with a first insulation interposed therebetween. The gate electrodes are formed in a multi-layered structure of at least two layers. An anode electrode is formed on the second substrate, and a phosphor screen is formed on the anode electrode.


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Lee, Sang-Jin. (2008). Electron emission device having multi-layered gate electrode structure (U.S. Patent No. 7336028). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7336028

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