The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2008
Filed:
May. 24, 2005
Applicants:
Richard Francis, Manhattan Beach, CA (US);
Chiu NG, El Segundo, CA (US);
Inventors:
Richard Francis, Manhattan Beach, CA (US);
Chiu Ng, El Segundo, CA (US);
Assignee:
International Rectifier Corporation, El Segundo, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/74 (2006.01); H01L 29/06 (2006.01); H01L 29/36 (2006.01);
U.S. Cl.
CPC ...
Abstract
An insulated gate trench type semiconductor device having L-shaped diffused regions, each diffused region having a vertically oriented portion and a horizontally oriented portion extending laterally from the vertically oriented portion, and a method for manufacturing the device in which the vertically oriented portion of each L-shaped diffused region is formed by directing dopants at an angle toward a sidewall of a trench to form the vertically oriented portion using the edge of the opposing sidewall of the trench as a mask.