The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2008
Filed:
Apr. 28, 2006
Hyun-soo Kim, Gyeonggi-do, KR;
Jae-hee Cho, Yongin-si, KR;
Suk-ho Yoon, Seoul, KR;
Samsung Electro-Mechanics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A semiconductor light emitting device comprising: a transparent substrate; an electron injection layer of N-type GaN-based semiconductor; an active layer on the electron injection layer; a hole injection layer of P-type GaN-based semiconductor on the active layer; a first electrode structure on the hole injection layer; a second electrode structure on the electron injection layer; and a circuit substrate flip-chip bonded with the electrode structures, wherein the first electrode structure comprises a contact metal structure which is mesh- or island-shaped on the hole injection layer to expose a surface portion of the hole injection layer, and a reflective layer which covers the contact metal structure and the exposed surface portion of the hole injection layer, at least an upper portion of the reflective layer being made of silver (Ag) or aluminum (Al), an area ratio of the contact metal structure to the first electrode structure satisfies a following inequality: 0.4≦A/A<1.