The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 26, 2008

Filed:

Apr. 27, 2005
Applicants:

Connie Pin-chin Wang, Mountain View, CA (US);

Zoran Krivokapic, Santa Clara, CA (US);

Suzette Keefe Pangrle, Cupertino, CA (US);

Jinsong Yin, Sunnyvale, CA (US);

Inventors:

Connie Pin-Chin Wang, Mountain View, CA (US);

Zoran Krivokapic, Santa Clara, CA (US);

Suzette Keefe Pangrle, Cupertino, CA (US);

Jinsong Yin, Sunnyvale, CA (US);

Assignees:

Spansion LLC, Sunnyvale, CA (US);

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a memory device having a metal nanocrystal charge storage structure. A substrate is provided and a first layer of dielectric material is grown on the substrate. An absorption layer is formed on the first layer of dielectric material. The absorption layer includes a plurality of titanium atoms bonded to the first layer of dielectric material, a nitrogen atom bonded to each titanium atom, and at least one ligand bonded to the nitrogen atom. The at least one ligand is removed from the nitrogen atoms to form nucleation centers. A metal such as tungsten is bonded to the nucleation centers to form metallic islands. A dielectric material is formed on the nucleation centers and annealed to form a nanocrystal layer. A control oxide is formed over the nanocrystal layer and a gate electrode is formed on the control oxide.


Find Patent Forward Citations

Wang, Connie Pin-Chin. (2008). Method for manufacturing a memory device having a nanocrystal charge storage region (U.S. Patent No. 7335594). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7335594

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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