The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2008
Filed:
Aug. 16, 2007
Akio Machida, Kanagawa, JP;
Hirotaka Akao, Tokyo, JP;
Takahiro Kamei, Kanagawa, JP;
Isamu Nakao, Kanagawa, JP;
Akio Machida, Kanagawa, JP;
Hirotaka Akao, Tokyo, JP;
Takahiro Kamei, Kanagawa, JP;
Isamu Nakao, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A method for making a thin-film semiconductor device includes an annealing step of irradiating an amorphous semiconductor thin film with a laser beam so as to crystallize the amorphous semiconductor thin film. In the annealing step, the semiconductor thin film is continuously irradiated with the laser beam while shifting the position of the semiconductor thin film irradiated with the laser beam at a predetermined velocity so that excess hydrogen can be removed from the region irradiated with the laser beam without evaporating and expanding hydrogen ions in the semiconductor thin film.