Production method for composite oxide thin film and device therefor and composite oxide film produced thereby

Abstract

A method and an apparatus which permits making a composite oxide thin film excellent in crystallinity easily and at a low temperature, with the capability of controlling the basic unit cell structure as desired, and without the need for a post annealing, as well as a composite oxide thin film thereby, especially a Cu group high temperature superconducting thin film, are disclosed. A thin Cu group high temperature superconducting film, which is constituted of a charge supply block () and a superconducting block (), is formed on a substrate by alternately sputtering from a sputtering target having a composition of the charge supply block () and a sputtering target having a composition of the superconducting block () and repeating such an alternate sputtering operation a number of times needed for the film to reach a desired thickness. The first sputtering target for the charge supply block has a charge supply block composition in which Cu atoms are partly substituted with atoms of an element having a structure stabilizing effect.