The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2008
Filed:
Jun. 24, 2004
Kang-ho Ahn, Seoul, KR;
Kang-Ho Ahn, Seoul, KR;
Hyundai Calibration & Certification Technologies Co., Ltd., Kyungki-Do, KR;
Other;
Abstract
Provided is apparatus for controlling flow rate of gases used in semiconductor device by differential pressure by generating differential pressure in a fluid path. A differential pressure generation element generates pressure difference in the fluid path of gases used in semiconductor device fabrication, a pressure, sensor which is installed at a bypass of the fluid path detects the pressure difference, and a central processing unit (CPU) measures and controls a flow rate of the gases, thereby the present invention is capable of controlling the flow rate precisely and rapidly, and enhancing the degree of purity of the gases by the filtering function of the differential pressure generation element itself.