The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7333378 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 19, 2008

Filed:

Feb. 18, 2005
Applicant:

Jae-yoon Sim, Los Angeles, CA (US);

Inventor:

Jae-Yoon Sim, Los Angeles, CA (US);

Assignee:

Samsung Electronics Co., Ltd, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor memory device having a shared sense amplifier architecture includes a bitline equalizing voltage generator, which recycles a boost voltage to generate bitline equalizing voltage. The bitline equalizing voltage is used to generate signals for activating bitline equalizing circuits to precharge the bitlines of at least one of the first and second memory block with a bitline precharge voltage, when the memory block is not currently selected for a data operation. The bitline equalizing voltage generator may be configured to recycle the boost voltage that was used to generate a bitline isolation signal or a wordline drive signal.


Find Patent Forward Citations

Sim, Jae-Yoon. (2008). Memory device that recycles a signal charge (U.S. Patent No. 7333378). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7333378

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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