The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2008
Filed:
Jun. 30, 2003
Kazuyoshi Ueno, Kanagawa, JP;
Kazuyoshi Ueno, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
A semiconductor device with a metallic region can have a resistance to stress migration and increased reliability. A lower layer wiring made from a barrier metal film () and a copper containing metallic film () can be formed within an insulating film (). An interlayer insulating film (orand) can be formed thereon. An upper layer wiring made from a barrier metal film (orand) and a copper containing metallic film (orand) is formed within the interlayer insulating film (orand). A silver containing metallic protective film (and) can be formed on surfaces of the lower layer wiring and upper layer wiring.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile