The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2008
Filed:
Dec. 28, 2004
Takashi Uno, Takarazuka, JP;
Manabu Yanagihara, Toyonaka, JP;
Hidetoshi Ishida, Kyoto, JP;
Tsuyoshi Tanaka, Neyagawa, JP;
Takashi Uno, Takarazuka, JP;
Manabu Yanagihara, Toyonaka, JP;
Hidetoshi Ishida, Kyoto, JP;
Tsuyoshi Tanaka, Neyagawa, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
In the semiconductor switch of the present invention, the gate electrode, source electrode and drain electrode are formed such that the distance between the gate and the drain of an MESFET, assuming a shunt FET, is longer than the distance between the gate and the drain of an MESFET, assuming a through FET, so that the gate breakdown voltage of the MESFET, assuming a shunt FET, is increased without changing the gate breakdown voltage of the MESFET, assuming a through FET.