The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2008
Filed:
Sep. 01, 2000
Jifa Hao, White Haven, PA (US);
John L. Benjamin, Mountaintop, PA (US);
Randall L. Case, Mountaintop, PA (US);
Jae J. Yun, Mountaintop, PA (US);
Jifa Hao, White Haven, PA (US);
John L. Benjamin, Mountaintop, PA (US);
Randall L. Case, Mountaintop, PA (US);
Jae J. Yun, Mountaintop, PA (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A power semiconductor device having high avalanche capability comprises an Ndoped substrate and, in sequence, Ndoped, Pdoped, and Pdoped semiconductor layers, the Pand Pdoped layers having a combined thickness of about 5 μm to about 12 μm. Recombination centers comprising noble metal impurities are disposed substantially in the Nand Pdoped layers. A process for forming a power semiconductor device with high avalanche capability comprises: forming an Ndoped epitaxial layer on an Ndoped substrate, forming a Pdoped layer in the Ndoped epitaxial layer, forming a Pdoped layer in the Pdoped layer, and forming in the Pand Ndoped layers recombination centers comprising noble metal impurities. The Pand Pdoped layers have a combined thickness of about 5 μm to about 12 μm.