The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2008
Filed:
Nov. 08, 2004
Tomonori Hino, Kanagawa, JP;
Hironobu Narui, Kanagawa, JP;
Takayuki Kawasumi, Kanagawa, JP;
Tsuyoshi Nagatake, Kanagawa, JP;
Yuichi Kuromizu, Kanagawa, JP;
Tadahiko Kawasaki, Tokyo, JP;
Noriko Kobayashi, Kanagawa, JP;
Masaki Shiozaki, Kanagawa, JP;
Jugo Mitomo, Kanagawa, JP;
Michiko Komine, Tokyo, JP;
Tomonori Hino, Kanagawa, JP;
Hironobu Narui, Kanagawa, JP;
Takayuki Kawasumi, Kanagawa, JP;
Tsuyoshi Nagatake, Kanagawa, JP;
Yuichi Kuromizu, Kanagawa, JP;
Tadahiko Kawasaki, Tokyo, JP;
Noriko Kobayashi, Kanagawa, JP;
Masaki Shiozaki, Kanagawa, JP;
Jugo Mitomo, Kanagawa, JP;
Michiko Komine, Tokyo, JP;
Sony Corporation, Tokyo, JP;
Abstract
A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.