The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2008
Filed:
Mar. 18, 2005
Ralph Stoemmer, Neubiberg, DE;
Ralph Stoemmer, Neubiberg, DE;
Infineon Technologies AG, Munich, DE;
Abstract
The present invention relates to a method for fabricating a semiconductor device. In order to provide for a high carrier mobility in an active region of the device, germanium atoms are implanted into a surface of a semiconductor substrate such that a germanium-containing layer inside the semiconductor substrate is formed. Then, the surface of the semiconductor surface is oxidized down to and including the upper part of the germanium-containing layer, thereby pushing the implanted germanium atoms from the surface down into the semiconductor substrate and thereby enhancing the germanium concentration inside the remaining germanium-containing layer and forming a layer with enhanced germanium concentration inside the semiconductor substrate. The fabrication of the semiconductor device is concluded such that the active region of the device is placed at least partly within the layer with enhanced germanium concentration.