The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2008
Filed:
Jun. 30, 2005
Applicant:
Raymond K. Orr, Kanata, CA;
Inventor:
Raymond K. Orr, Kanata, CA;
Assignee:
Potentia Semiconductor Inc., Wilmington, DE (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
Abstract
A MOSFET has its gate voltage controlled to provide a constant drain current of the MOSFET, for example to limit inrush current for charging a capacitance of a power supply arrangement. A decrease in the gate voltage supplied to the MOSFET, corresponding to an increase in the junction temperature of the MOSFET, by more than a determined amount is detected and used to reduce the gate voltage, and hence the drain current, for example to zero, to prevent heating of the MOSFET beyond a maximum operating temperature.