The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2008
Filed:
Nov. 28, 2006
Torkel Arnborg, Stockholm, SE;
Torkel Arnborg, Stockholm, SE;
Infineon Technologies AG, Munich, DE;
Abstract
A monolithically integrated microwave frequency high power amplifier device comprises a plurality of transistors connected in a load modulation configuration wherein the number of the transistors that is operational depends on the drive level. The transistors have each a finger type layout, where fingers from different ones of the transistors are interleaved. The sources of the plurality of transistors are typically interconnected, whereas the gates of the transistors have separate connections for connection to separate package leads. Similarly, the drains of the transistors have separate connections for connection to separate package leads. Advantageously, an LC-based passive network performs a power combining operation of the amplifier device.