The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2008

Filed:

Oct. 26, 2005
Applicants:

Ross W. Bird, Canton, PA (US);

Brian Shea, Albuquerque, NM (US);

Michael Goehrig, Lock Haven, PA (US);

Chad Savitz, Williamsport, PA (US);

Inventors:

Ross W. Bird, Canton, PA (US);

Brian Shea, Albuquerque, NM (US);

Michael Goehrig, Lock Haven, PA (US);

Chad Savitz, Williamsport, PA (US);

Assignee:

QorTek, Inc., Williamsport, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03B 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A power control circuit is presented. The circuit includes a pair of parallel optocoupler/logic stages and a pair of parallel voltage-to-current driver stages electrically coupled to a halfbridge stage in the order described. An input signal is communicated to the optocoupler/logic stage and processed therein to produce two distinctly separate but complimentary waveforms. Complimentary waveforms are communicated to the voltage-to-current driver stage to drive a paired arrangement of JFET switches. Thereafter, the JFET switches communicate with the halfbridge stage to control function of BJT switches. BJT switches are sequenced to produce a high power output. The present invention has immediate applicability to power conditioning, control, and distribution systems, as well as other applications which include or rely on silicon power transistors.


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