The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2008
Filed:
Jun. 10, 2005
Applicants:
Wataru Saito, Kawasaki, JP;
Ichiro Omura, Yokohama, JP;
Kouhei Morizuka, Kawasaki, JP;
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A multi-layered structure in which a p-3C-SiC layeris formed above a p-Si substrateis formed, above which an I-GaN layer (channel layer), an n-AlGaN layer (barrier layer)are formed. A source electrode, a drain electrode, and a gate electrodeare formed above the n-AlGaN layer. The source electrodeand the drain electrodeform an ohmic contact with the n-AlGaN layer. The gate electrodeforms a Schottky junction with the n-AlGaN layer