The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2008

Filed:

Jun. 30, 2004
Applicants:

Takao Nishikawa, Shiojiri, JP;

Tatsuya Shimoda, Fujimi-machi, JP;

Yoshihiro Iwasa, Sendai, JP;

Taishi Takenobu, Sendai, JP;

Shinichiro Kobayashi, Sendai, JP;

Tadaoki Mitani, Ishikawa-ken, JP;

Inventors:

Takao Nishikawa, Shiojiri, JP;

Tatsuya Shimoda, Fujimi-machi, JP;

Yoshihiro Iwasa, Sendai, JP;

Taishi Takenobu, Sendai, JP;

Shinichiro Kobayashi, Sendai, JP;

Tadaoki Mitani, Ishikawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 35/24 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

An organic thin film transistor and a method of manufacturing the same are provided. The transistor has a threshold voltage that can be easily controlled without changing the material forming an organic semiconductor film. The organic thin film transistor includes a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor film. A threshold voltage controlling film is provided between the gate insulating film and the organic semiconductor film.


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