The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2008
Filed:
Mar. 07, 2005
Applicant:
Hideshi Miyajima, Yokohama, JP;
Inventor:
Hideshi Miyajima, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed is a method for manufacturing a semiconductor device, comprising forming a low dielectric constant insulating film having a porous structure above a semiconductor substrate, forming a recess in the low dielectric constant insulating film, providing a burying insulating film above the low dielectric constant insulating film having the recess and in the recess, removing a the burying insulating film provided in the recess, thereby opening the recess, and burying conductive material in the recess, forming a conductive portion.