The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2008
Filed:
Apr. 02, 2004
Lawrence Clevenger, Lagrangeville, NY (US);
Louis Hsu, Fishkill, NY (US);
Christy S. Tyberg, Mahopac, NY (US);
Tsorng-dih Yuan, Hopewell Junction, NY (US);
Lawrence Clevenger, Lagrangeville, NY (US);
Louis Hsu, Fishkill, NY (US);
Christy S. Tyberg, Mahopac, NY (US);
Tsorng-Dih Yuan, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A process for fabricating a low dielectric constant semiconductor comprising the steps of: depositing a first metal layer on a substrate; patterning the first metal layer to produce a patterned first metal wiring; applying a first insulating material onto the patterned first metal wiring to form a support structure; patterning the first insulating material by a contact printing process; depositing a second insulating material of lower dielectric constant onto the support structure; planarizing the second insulating material; depositing a polish-stop film layer over the planarized second insulating material, thereby forming a plurality of metal studs; depositing a second metal layer onto the polish-stop film layer forming interconnects with said studs; and patterning the metal layer to produce a second metal wiring interconnecting to the first wiring via the metal studs.