The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2008
Filed:
Dec. 22, 2006
Woong Je Sung, Bucheon-si, KR;
Woong Je Sung, Bucheon-si, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
A method for manufacturing a bipolar transistor includes: forming a device isolation layer on a semiconductor substrate having first and second well regions of a first conductivity therein; implanting ions of a second conductivity in the first well to form a third well; forming and patterning a conductive layer on the semiconductor substrate; forming an emitter electrode pattern on the third well region, and forming a collector electrode pattern on the second well region; forming spacers at sidewalls of the emitter and collector electrode patterns; performing a diffusion process to form an emitter region of a first conductivity on the third well region and to form a collector region of a first conductivity on the second well region; implanting ions of a second conductivity in the third well region to form a base region; and removing the emitter electrode and collector region patterns.