The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2008
Filed:
Dec. 19, 2003
Kevin Ward Haberern, Cary, NC (US);
Raymond Rosado, Apex, NC (US);
Michael John Bergman, Chapel Hill, NC (US);
David Todd Emerson, Chapel Hill, NC (US);
Kevin Ward Haberern, Cary, NC (US);
Raymond Rosado, Apex, NC (US);
Michael John Bergman, Chapel Hill, NC (US);
David Todd Emerson, Chapel Hill, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
A method of forming a semiconductor device may include forming a semiconductor structure on a substrate wherein the semiconductor structure defines a mesa having a mesa surface opposite the substrate and mesa sidewalls between the mesa surface and the substrate. A first passivation layer can be formed on at least portions of the mesa sidewalls and on the substrate adjacent the mesa sidewalls wherein at least a portion of the mesa surface is free of the first passivation layer and wherein the first passivation layer comprises a first material. A second passivation layer can be formed on the first passivation layer wherein at least a portion of the mesa surface is free of the second passivation layer, and wherein the second passivation layer comprises a second material different than the first material. Related devices are also discussed.