The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2008
Filed:
Feb. 10, 2006
Ken Mimuro, Tonami, JP;
Mikiya Uchida, Tonami, JP;
Mototaka Ochi, Tonami, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A solid-state imaging device includes: a plurality of N-type photodiode regions formed inside a P-type well; a gate electrode having one edge being positioned adjacent to each of the photodiode regions; a N-type drain region positioned adjacent to the other edge of the gate electrode; an element-isolating portion having a STI structure, and a gate oxide film having a thickness of not more than 10 nm. One edge of the gate electrode overlaps the photodiode region. First, second and third regions are formed on a surface portion extending from the photodiode region to the drain region, in conditions such that the first region is disposed with a predetermined distance from one edge of the gate electrode and has a P-type first concentration C, the second region is disposed with one edge positioned adjacent to the first region and the other edge overlapping the gate electrode and has a P-type second concentration C, and the third region is disposed with one edge positioned adjacent to the second region and the other edge positioned adjacent to the drain region and has a P-type third concentration C, wherein C>C>Cor C≈C>C. The readout characteristic at a low voltage is satisfactory, and image defects such as white flaws and dark current are suppressed sufficiently.