The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2008
Filed:
Nov. 19, 2004
Jae Chang Jung, Ichon-shi, KR;
Keun Kyu Kong, Kwangju, KR;
Hyeong Soo Kim, Ichon-shi, KR;
Jin Soo Kim, Taejeon-shi, KR;
Cha Won Koh, Seoul, KR;
Sung Eun Hong, Sungnam-shi, KR;
Geun Su Lee, Ichon-shi, KR;
Min Ho Jung, Ichon-shi, KR;
Ki Ho Baik, Ichon-shi, KR;
Jae Chang Jung, Ichon-shi, KR;
Keun Kyu Kong, Kwangju, KR;
Hyeong Soo Kim, Ichon-shi, KR;
Jin Soo Kim, Taejeon-shi, KR;
Cha Won Koh, Seoul, KR;
Sung Eun Hong, Sungnam-shi, KR;
Geun Su Lee, Ichon-shi, KR;
Min Ho Jung, Ichon-shi, KR;
Ki Ho Baik, Ichon-shi, KR;
Hynix Semiconductor Inc., , KR;
Abstract
The present invention provides a process for using an amine contamination-protecting top-coating composition. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives; amino acid derivatives; amide derivatives; urethane derivatives; urea derivatives; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and/or difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer containing an alicyclic main chain using a light source, such as KrF (248 nm), ArF (193 nm), F(157 nm), E-beam, ion beam and extremely ultraviolet (EUV).