The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2008
Filed:
Aug. 23, 2005
Hong-je Cho, Cheonan-si, KR;
Seung-yong Lee, Daejeon-si, KR;
Joon-woo Lee, Iksan-si, KR;
Jae-yeon Lee, Iksan-si, KR;
Seung-hwan Chon, Jeonju-si, KR;
Yong-suk Choi, Seoul, KR;
Young-chul Park, Iksan-si, KR;
Jin-su Kim, Daejeon-si, KR;
Kyu-sang Kim, Yongin-si, KR;
Dong-uk Choi, Suwon-si, KR;
Kwan-tack Lim, Suwon-si, KR;
Hong-Je Cho, Cheonan-si, KR;
Seung-Yong Lee, Daejeon-si, KR;
Joon-Woo Lee, Iksan-si, KR;
Jae-Yeon Lee, Iksan-si, KR;
Seung-Hwan Chon, Jeonju-si, KR;
Yong-Suk Choi, Seoul, KR;
Young-Chul Park, Iksan-si, KR;
Jin-Su Kim, Daejeon-si, KR;
Kyu-Sang Kim, Yongin-si, KR;
Dong-Uk Choi, Suwon-si, KR;
Kwan-Tack Lim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
An etchant for removing an indium oxide layer includes sulfuric acid as a main oxidizer, an auxiliary oxidizer such as HPO, HNO, CHCOOH, HClO, HO, and a Compound A that is obtained by mixing potassium peroxymonosulfate (2KHSO), potassium bisulfate (KHSO), and potassium sulfate (KSO) together in the ratio of 5:3:2, an etching inhibitor comprising an ammonium-based material, and water. The etchant may remove desired portions of the indium oxide layer without damage to a photoresist pattern or layers underlying the indium oxide layer.