The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2008
Filed:
Mar. 11, 2005
Geoffrey S. Kinsey, Pasadena, CA (US);
Dmitri D. Krut, Encino, CA (US);
Joseph C. Boisvert, Thousand Oaks, CA (US);
Christopher M. Fetzer, Saugus, CA (US);
Richard R. King, Thousand Oaks, CA (US);
Geoffrey S. Kinsey, Pasadena, CA (US);
Dmitri D. Krut, Encino, CA (US);
Joseph C. Boisvert, Thousand Oaks, CA (US);
Christopher M. Fetzer, Saugus, CA (US);
Richard R. King, Thousand Oaks, CA (US);
The Boeing Company, Chicago, IL (US);
Abstract
A metamorphic avalanche photodetector includes a substrate, and an active structure supported on the substrate. The active structure has a metamorphic absorption structure that absorbs light and responsively produces primary charge carriers, and an avalanche multiplication structure that receives the primary charge carriers from the metamorphic absorption structure and responsively produces secondary charge carriers. An output electrical contact is in electrical communication with the active structure to collect at least some of the secondary charge carriers. A buffer layer lies between the substrate and the active structure, between the active structure and the output electrical contact, or between the metamorphic absorption structure and the avalanche multiplication structure. A lattice parameter of the buffer layer varies with position through a thickness of the buffer layer.