The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 05, 2008

Filed:

Feb. 06, 2006
Applicants:

Mau-song Chou, Rancho Palos Verdes, CA (US);

Jonathan W. Arenberg, Santa Monica, CA (US);

Mark A. Menard, Chino Hills, CA (US);

Thomas T. Chung, Redondo Beach, CA (US);

Inventors:

Mau-Song Chou, Rancho Palos Verdes, CA (US);

Jonathan W. Arenberg, Santa Monica, CA (US);

Mark A. Menard, Chino Hills, CA (US);

Thomas T. Chung, Redondo Beach, CA (US);

Assignee:

Northrop Grumman Corporation, Los Angeles, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/01 (2006.01);
U.S. Cl.
CPC ...
Abstract

A technique for providing high-contrast images of defects in semiconductor devices and arrays of such devices, by illuminating each semiconductor device under inspection with broadband infrared radiation, and then forming an image of radiation that is specularly reflected from the semiconductor device. Many semiconductor devices and arrays of such devices have a metal backing layer that specularly reflects the illumination back into an appropriately positioned and aligned camera, selected to be sensitive to infrared wavelengths at which the semiconductor device materials are relatively transparent.


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