The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2008
Filed:
Oct. 21, 2005
Mark Hollatz, Neustadt, DE;
Mark Hollatz, Neustadt, DE;
Qimonda AG, Munich, DE;
Abstract
A method is provided for fabricating a semiconductor structure, such as a DRAM memory cell, that includes an elevated region with at least one sidewall. The at least one sidewall is provided with an insulation layer. A mask layer is applied to the insulation layer. The mask layer is patterned in such a way that it is removed from the surface of the elevated region and from an edge region of the insulation layer, said edge region adjoining the sidewall of the elevated region. A material is implanted into the surface of the elevated region and also into the edge region of the insulation layer. The material preferably alters the properties of the surface of the elevated region and also increases the etching rate of the insulation layer. The mask layer is removed and the insulation layer is subjected to a whole-area etching step.