The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2008
Filed:
Nov. 11, 2005
Peter Rieve, Windeck-Dattenfeld, DE;
Konstantin Seibel, Siegen, DE;
Jens Prima, Gehrde, DE;
Markus Scholz, Kreuztal Krombach, DE;
Tarek Lule, Saint Egreve, FR;
Stephan Benthien, Saint Ismier, FR;
Michael Sommer, Av. Alscae-Lorraine, FR;
Michael Wagner, Bretnig-Hauswalde, DE;
Peter Rieve, Windeck-Dattenfeld, DE;
Konstantin Seibel, Siegen, DE;
Jens Prima, Gehrde, DE;
Markus Scholz, Kreuztal Krombach, DE;
Tarek Lule, Saint Egreve, FR;
Stephan Benthien, Saint Ismier, FR;
Michael Sommer, Av. Alscae-Lorraine, FR;
Michael Wagner, Bretnig-Hauswalde, DE;
STMicroelectronics N.V., Amsterdam, NL;
Abstract
The invention relates to a method for producing a TFA image sensor in which a multi-layer arrangement comprising a photo diode matrix is arranged on an ASIC switching circuit provided with electronic circuits for operating the TFA image sensor, such as pixel electronics, peripheral electronics and system electronics, for the pixel-wise conversion of electromagnetic radiation into an intensity-dependent photocurrent, the pixels being connected to contacts of the underlying pixel electronics of the ASIC switching circuit. The method enables conventionally produced ASIC switching circuits to be used without impairing the topography of the photoactive sensor surface. The CMOS passivation layer in the photoactive region and then the upper CMOS metallization are removed and replaced by a metallic layer which is structured in the pixel raster, for the formation of back electrodes. The photo diode matrix is then applied and structured, said photo diode matrix being embodied as a pixel matrix, on which a passivating protective layer and/or a color filter layer having a passivating action can be applied.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile